«Technology» Experiment New capabilities of growing semi-conductor materials by the method of electron beam crucibleless zone melting under microgravity

1Paton, ВЕ, 1Asnis, Yu.A, 1Zabolotin, SP, 2Baranskii, PI, 2Babich, VM
1E.O. Paton Electric Welding Institute of the National Academy of Sciences of Ukraine, Kyiv, Ukraine
2V.Ye. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine, Kyiv, Ukraine
Kosm. nauka tehnol. 2000, 6 ;(4):140-141
https://doi.org/10.15407/knit2000.04.155
Section: Space Materials and Technologies
Publication Language: english
Keywords: Space Materials and Technologies
References: 
1. Paton B. E., Asnis E. A., Zabolotin S. P., et al. Features of production of semi-conductor materials under microgravity. Avtomat. Svarka, N 10, 97—99 (1999).
2. Paton B. E., Lapchinskii V. F., Asnis E. A., et al. Urgent tasks of production of materials for electronic devices under microgravity. Kosm. nauka tehnol., 4 (5-6), 95—98 (1998) [in Russian].
https://doi.org/10.15407/knit1998.05.095
3. Paton B. E., Asnis E. A., Zabolotin S. P., et al. Crucibleless zone melting of silicon single-crystals using the electron beam. Reports of the NAS of Ukraine, N 7, 108— 112 (1999).