«Technology» Experiment New capabilities of growing semi-conductor materials by the method of electron beam crucibleless zone melting under microgravity
Рубрика:
| 1Paton, ВЕ, 1Asnis, Yu.A, 1Zabolotin, SP, 2Baranskii, PI, 2Babich, VM 1E.O. Paton Electric Welding Institute of the National Academy of Sciences of Ukraine, Kyiv, Ukraine 2V.Ye. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine, Kyiv, Ukraine |
| Kosm. nauka tehnol. 2000, 6 ;(4):140-141 |
| https://doi.org/10.15407/knit2000.04.155 |
| Мова публікації: english |
| Ключові слова: Space Materials and Technologies |
References:
1. Paton B. E., Asnis E. A., Zabolotin S. P., et al. Features of production of semi-conductor materials under microgravity. Avtomat. Svarka, N 10, 97—99 (1999).
2. Paton B. E., Lapchinskii V. F., Asnis E. A., et al. Urgent tasks of production of materials for electronic devices under microgravity. Kosm. nauka tehnol., 4 (5-6), 95—98 (1998) [in Russian].
https://doi.org/10.15407/knit1998.05.095
https://doi.org/10.15407/knit1998.05.095
3. Paton B. E., Asnis E. A., Zabolotin S. P., et al. Crucibleless zone melting of silicon single-crystals using the electron beam. Reports of the NAS of Ukraine, N 7, 108— 112 (1999).